Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1997-03-19
1998-09-29
Niebling, John F.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438202, H01L 21265
Patent
active
058145389
ABSTRACT:
A method for forming a bipolar transistor comprises the following steps. A collector region of a first conductivity type is formed in a substrate adjacent a surface thereof. A base region of a second conductivity type is then formed in the collector region adjacent the surface of the substrate. A base electrode is formed on a first portion of the substrate adjacent the base region wherein the base electrode comprises a dopant of the second conductivity type. Next, an emitter electrode is formed on a second portion of the substrate adjacent the base region wherein the emitter electrode comprises a dopant of the first conductivity type. The dopant of the second conductivity type from the base electrode is diffused into the first portion of the base region to increase a dopant concentration of the first portion of the base region adjacent the base electrode. The dopant of the first conductivity type from the emitter electrode is diffused into the second portion of the substrate to form an emitter region of the first conductivity type in the base region adjacent the emitter electrode. Advantageously, the first and second diffusion steps can be performed simultaneously in order to reduce the number of steps.
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Kim Young-ok
Youn Jong-mil
Lebentritt Michael S.
Niebling John F.
Samsung Electronics Co,. Ltd.
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