Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2010-03-09
2011-10-18
Garber, Charles (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S197000, C438S218000, C438S296000, C257SE21486, C257SE21488, C257SE21548
Reexamination Certificate
active
08039340
ABSTRACT:
A method of forming a series of spaced trenches into a substrate includes forming a plurality of spaced lines over a substrate. Anisotropically etched sidewall spacers are formed on opposing sides of the spaced lines. Individual of the lines have greater maximum width than minimum width of space between immediately adjacent of the spacers between immediately adjacent of the lines. The spaced lines are removed to form a series of alternating first and second mask openings between the spacers. The first mask openings are located where the spaced lines were located and are wider than the second mask openings. Alternating first and second trenches are simultaneously etched into the substrate through the alternating first and second mask openings, respectively, to form the first trenches to be wider and deeper within the substrate than are the second trenches. Other implementations and embodiments are disclosed.
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Davis Neal L.
Housley Richard
Khurana Ranjan
Garber Charles
Lee Cheung
Micro)n Technology, Inc.
Wells St. John P.S.
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