Methods of forming an amorphous silicon thin film

Details Methods of forming an amorphous silicon thin film Methods of forming an amorphous silicon thin film

2009-04-30

2011-12-13

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S685000, C257SE21462

Reexamination Certificate

active

08076242

ABSTRACT:
A method for forming an amorphous silicon thin film is disclosed. In some embodiments, a method includes loading a substrate into a reaction chamber; and conducting a plurality of deposition cycles on the substrate. Each of at least two of the cycles includes: supplying a silicon precursor to the reaction chamber during a first time period; applying radio frequency power to the reaction chamber at least partly during the first time period; stopping supplying of the silicon precursor and applying of the radio frequency power during a second time period between the first time period and an immediately subsequent deposition cycle; and supplying hydrogen plasma to the reaction chamber during a third time period between the second time period and the immediately subsequent deposition cycle. The method allows formation of an amorphous silicon film having an excellent step-coverage and a low roughness at a relatively low deposition temperature.

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