Methods of forming a transistor having a recessed gate...

Details Methods of forming a transistor having a recessed gate... Methods of forming a transistor having a recessed gate...

2005-05-24

2005-05-24

Pham, Hoai (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S270000

Reexamination Certificate

active

06897114

ABSTRACT:
In manufacturing a recessed gate transistor, a channel implantation and a source/drain implantation are performed by means of a single implantation mask prior to the formation of a gate opening. Thereafter, the gate opening is formed to a depth that extends substantially to the channel implant so that raised drain and source regions are created which are substantially even with the gate electrode formed in the gate opening. Consequently, expensive and complex epitaxial growth steps can be avoided.

REFERENCES:
patent: 6319776 (2001-11-01), Tung
patent: 6358800 (2002-03-01), Tseng
patent: 6642130 (2003-11-01), Park

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