Methods of forming a semiconductor device that allow...

Details Methods of forming a semiconductor device that allow... Methods of forming a semiconductor device that allow...

2006-12-29

2008-09-02

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C257SE21580, C257SE21244

Reexamination Certificate

active

07419909

ABSTRACT:
Patterns are formed in a semiconductor device by defining a lower layer that includes a first region and a second region on a semiconductor substrate, forming first patterns with a first pitch that extend to the first and second regions, forming second patterns with a second pitch in the second region that are alternately arranged with the first patterns, forming a space insulating layer that covers the first and second patterns and comprises gap regions that are alternately arranged with the first patterns so as to correspond with the second patterns, forming third patterns that correspond to the second patterns in the gap regions, respectively, etching the space insulating layer between the first and second patterns and between the first and third patterns, such that the space insulating layer remains between the second patterns and the third patterns, and etching the lower layer using the first, second, and third patterns and the remaining space insulating layer between the second and third patterns as an etching mask.

REFERENCES:
patent: 6596578 (2003-07-01), Takeuchi et al.
patent: 10-1995-0001914 (1995-01-01), None
patent: 10-0181749 (1998-09-01), None
patent: 10-2005-0002311 (2005-01-01), None

Affiliated with

Also associated with

Rating

Methods of forming a semiconductor device that allow... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of forming a semiconductor device that allow..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of forming a semiconductor device that allow... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3982088