Methods of forming a semiconductor device including a metal...

Details Methods of forming a semiconductor device including a metal... Methods of forming a semiconductor device including a metal...

2007-02-20

2007-02-20

Smith, Bradley K. (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21438

Reexamination Certificate

active

10863828

ABSTRACT:
Embodiments of the present invention include methods of forming a contact to a capacitor in a semiconductor device. A metal silicide layer is formed at a top surface of a conductive plug of the semiconductor device that is coupled to a bottom electrode of the capacitor to provide an ohmic contact therebetween. Forming a metal silicide layer may include exposing a surface of the conductive plug, depositing a metal layer of the bottom electrode on the exposed surface of the conductive plug and thermally processing the semiconductor device to react a part of the deposited metal layer and the conductive plug to form the metal silicide layer. Methods of forming a semiconductor device including a capacitor having a metal silicide layer connecting a bottom electrode of the capacitor and a conductive plug are also provided.

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Notice to File a Response/ Amendment to the Examination Report for Korean patent application No. 10-2003-0050125 mailed on May 31, 2005.

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