Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-04-30
2010-10-19
Nguyen, Ha Tran T (Department: 2829)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S643000, C438S653000, C257S751000, C257S767000
Reexamination Certificate
active
07816255
ABSTRACT:
Methods of forming a semiconductor device that includes a diffusion barrier film are provided. The diffusion barrier film includes a metal nitride formed by using a MOCVD process and partially treated with a plasma treatment. Thus, a specific resistance of the diffusion barrier film can be decreased, and the diffusion barrier film may have distinguished barrier characteristics.
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Choi Gil-Heyun
Choi Kyung-In
Hong Jong-Won
Lee Hyun-Bae
Lee Jong-Myeong
Dehne Aaron A
Myers Bigel Sibley & Sajovec P.A.
Nguyen Ha Tran T
Samsung Electronics Co,. Ltd.
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