Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2006-08-29
2006-08-29
Pert, Evan (Department: 2826)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
Reexamination Certificate
active
07098123
ABSTRACT:
Methods of forming a semiconductor device having a metal gate electrode include sequentially forming a gate insulator, a gate polysilicon layer and a metal-gate layer on a semiconductor substrate. The metal-gate layer and the gate polysilicon layer are sequentially patterned to form a gate pattern comprising a stacked gate polysilicon pattern and a metal-gate pattern. An oxidation barrier layer is formed to cover at least a portion of a sidewall of the metal-gate pattern.
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Notice from Korean Patent Office citing Korean Patent Publication No. 2000-61842, mailing date of Mar. 23, 2005, 2 sheets in English and 2 sheets in Korean.
Notice from Korean Patent Office for the corresponding Korean Patent Application citing Korean Patent Publication No. 102000-61842, mailing date of Sep. 15, 2005, 2 sheets in English and 2 sheets in Korean.
Choi Gil-Heyun
Choi Si-Young
Heo Seong-Jun
Kim Sung-Man
Ku Ja-Hum
Myers Bigel & Sibley Sajovec, PA
Pert Evan
Samsung Electronics Co,. Ltd.
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