Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-12-26
2008-08-19
Tsai, H. Jey (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S296000, C257SE21648
Reexamination Certificate
active
07413952
ABSTRACT:
A plurality of capacitor electrode openings is formed within capacitor electrode-forming material. A first set of the openings is formed to a depth which is greater within the capacitor electrode-forming material than is a second set of the openings. Conductive first capacitor electrode material is formed therein. A sacrificial retaining structure is formed elevationally over both the first capacitor electrode material and the capacitor electrode-forming material, leaving some of the capacitor electrode-forming material exposed. With the retaining structure in place, at least some of the capacitor electrode-forming material is etched from the substrate effective to expose outer sidewall surfaces of the first capacitor electrode material. Then, the sacrificial retaining structure is removed from the substrate, and then capacitor dielectric material and conductive second capacitor electrode material are formed over the outer sidewall surfaces of the first capacitor electrode material formed within the first and second sets of capacitor openings.
REFERENCES:
patent: 4517729 (1985-05-01), Batra
patent: 5236860 (1993-08-01), Fazan et al.
patent: 5340763 (1994-08-01), Dennison
patent: 5401681 (1995-03-01), Dennison
patent: 5467305 (1995-11-01), Bertin et al.
patent: 5498562 (1996-03-01), Dennison et al.
patent: 5532089 (1996-07-01), Adair et al.
patent: 5604696 (1997-02-01), Takaishi
patent: 5605857 (1997-02-01), Jost et al.
patent: 5652164 (1997-07-01), Dennison et al.
patent: 5654222 (1997-08-01), Sandhu et al.
patent: 5686747 (1997-11-01), Jost et al.
patent: 5702990 (1997-12-01), Jost et al.
patent: 5705838 (1998-01-01), Jost et al.
patent: 5767561 (1998-06-01), Frei et al.
patent: 5821140 (1998-10-01), Jost et al.
patent: 5869382 (1999-02-01), Kubota
patent: 5900660 (1999-05-01), Jost et al.
patent: 5955758 (1999-09-01), Sandhu et al.
patent: 5981350 (1999-11-01), Geusic et al.
patent: 5990021 (1999-11-01), Prall et al.
patent: 6037212 (2000-03-01), Chao
patent: 6037218 (2000-03-01), Dennison et al.
patent: 6059553 (2000-05-01), Jin et al.
patent: 6090700 (2000-07-01), Tseng
patent: 6108191 (2000-08-01), Bruchhaus et al.
patent: 6110774 (2000-08-01), Jost et al.
patent: 6133620 (2000-10-01), Uochi
patent: 6180450 (2001-01-01), Dennison
patent: 6204143 (2001-03-01), Roberts et al.
patent: 6204178 (2001-03-01), Marsh
patent: 6258650 (2001-07-01), Sunouchi
patent: 6274497 (2001-08-01), Lou
patent: 6303518 (2001-10-01), Tian et al.
patent: 6303956 (2001-10-01), Sandhu et al.
patent: 6323528 (2001-11-01), Yamazaki et al.
patent: 6331461 (2001-12-01), Juengling
patent: 6372554 (2002-04-01), Kawakita et al.
patent: 6383861 (2002-05-01), Gonzalez et al.
patent: 6399490 (2002-06-01), Jammy et al.
patent: 6403442 (2002-06-01), Reinberg
patent: 6432472 (2002-08-01), Farrell et al.
patent: 6458653 (2002-10-01), Jang
patent: 6458925 (2002-10-01), Fasano
patent: 6459138 (2002-10-01), Reinberg
patent: 6617222 (2003-09-01), Coursey
patent: 6645869 (2003-11-01), Chu et al.
patent: 6656748 (2003-12-01), Hall et al.
patent: 6667502 (2003-12-01), Agarwal et al.
patent: 6673693 (2004-01-01), Kirchhoff
patent: 6709978 (2004-03-01), Geusic et al.
patent: 6720232 (2004-04-01), Tu et al.
patent: 6767789 (2004-07-01), Bronner et al.
patent: 6784112 (2004-08-01), Arita et al.
patent: 6812513 (2004-11-01), Geusic et al.
patent: 6822261 (2004-11-01), Yamazaki et al.
patent: 6844230 (2005-01-01), Reinberg
patent: 6849496 (2005-02-01), Jaiprakash et al.
patent: 6897109 (2005-05-01), Jin et al.
patent: 6927122 (2005-08-01), Geusic et al.
patent: 6930640 (2005-08-01), Chung et al.
patent: 7042040 (2006-05-01), Horiguchi
patent: 7064365 (2006-06-01), An et al.
patent: 7073969 (2006-07-01), Kamm
patent: 7074669 (2006-07-01), Iijima et al.
patent: 7081384 (2006-07-01), Birner et al.
patent: 7084451 (2006-08-01), Forbes et al.
patent: 7125781 (2006-10-01), Manning et al.
patent: 7160788 (2007-01-01), Sandhu et al.
patent: 7179706 (2007-02-01), Patraw et al.
patent: 7199005 (2007-04-01), Sandhu et al.
patent: 7202127 (2007-04-01), Busch et al.
patent: 2001/0012223 (2001-08-01), Kohyama
patent: 2001/0026974 (2001-10-01), Reinberg
patent: 2002/0022339 (2002-02-01), Kirchhoff
patent: 2002/0030221 (2002-03-01), Sandhu et al.
patent: 2002/0039826 (2002-04-01), Reinberg
patent: 2002/0086479 (2002-07-01), Reinberg
patent: 2002/0090779 (2002-07-01), Jang
patent: 2002/0098654 (2002-07-01), Durcan et al.
patent: 2002/0153589 (2002-10-01), Oh
patent: 2002/0153614 (2002-10-01), Ema et al.
patent: 2002/0163026 (2002-11-01), Park
patent: 2003/0153146 (2003-08-01), Won et al.
patent: 2003/0178684 (2003-09-01), Nakamura
patent: 2003/0190782 (2003-10-01), Ko et al.
patent: 2003/0227044 (2003-12-01), Park
patent: 2004/0018679 (2004-01-01), Yu et al.
patent: 2004/0056295 (2004-03-01), Agarwal et al.
patent: 2004/0188738 (2004-09-01), Farnworth et al.
patent: 2005/0051822 (2005-03-01), Manning
patent: 2005/0054159 (2005-03-01), Manning et al.
patent: 2005/0158949 (2005-07-01), Manning
patent: 2005/0287780 (2005-12-01), Manning et al.
patent: 2006/0014344 (2006-01-01), Manning
patent: 2006/0024958 (2006-02-01), Ali
patent: 2006/0046420 (2006-03-01), Manning
patent: 2006/0051918 (2006-03-01), Busch et al.
patent: 2006/0063344 (2006-03-01), Manning et al.
patent: 2006/0063345 (2006-03-01), Manning et al.
patent: 2006/0115951 (2006-06-01), Mosley
patent: 2006/0121672 (2006-06-01), Basceri et al.
patent: 2006/0186451 (2006-08-01), Dusberg et al.
patent: 2006/0211211 (2006-09-01), Sandhu et al.
patent: 2006/0261440 (2006-11-01), Manning
patent: 2006/0263968 (2006-11-01), Manning
patent: 2007/0032014 (2007-02-01), Sandhu et al.
patent: 2007/0048976 (2007-03-01), Raghu
patent: 2007/0099328 (2007-03-01), Chiang et al.
patent: 2007/0145009 (2007-06-01), Fucsko et al.
patent: 4447804 (2002-01-01), None
patent: 20010061020 (2001-07-01), None
patent: 20010114003 (2001-12-01), None
patent: US06/06806 (2004-01-01), None
patent: 2004/027898 (2004-08-01), None
patent: US06/06806 (2004-08-01), None
patent: US0806806 (2004-08-01), None
patent: 2004/040252 (2004-12-01), None
patent: WO 2005/024936 (2005-03-01), None
patent: 2006/006806 (2007-03-01), None
Banhart,Aluminum Foams: On the Road to Real Applications, MRS Bulletin, pp. 290-295 (Apr. 2003).
Crouse et al.,Self-Assembled Nanostructures Using Anodized Alumina Thin Films for Optoelectronic Applications, IEEE, pp. 234-235 (1999).
Gibson et al.,Cellular Solids, MRS Bulletin, pp. 270-274 (Apr. 2003).
Green et al.,Cellular Ceramics: Intriguing Structures, Novel Properties, and Innovative Applications, MRS Bulletin, pp. 296-300 (Apr. 2003).
Green et al.,The Structure and Applications of Cellular Ceramics, Web Extra, 10 pages (Apr. 2003).
Karp et al.,Scaffolds for Tissue Engineering, MRS Bulletin, pp. 301-306 (Apr. 2003).
Kim et al.,A Mechanically Enhanced Storage Node for Virtually Unlimited Height(MESH)Capacitor Aiming at Sub 70nm DRAMs, IEEE, pp. 69-72 (Jan. 2004).
Konovalov et al.,Chemistry of Materials, Chem. Mater., vol. 11, No. 8, pp. 1949-1951 (Aug. 1999).
Kraynik,Foam Structure: From Soap Froth to Solid Foams, MRS Bulletin, pp. 275-276 (Apr. 2003).
Liang et al.,Nonlithographic Fabrication of Lateral Superlattices for Nanometric Electromagnetic-Optic. . . , IEEE J. Selected Topics in Quantum Electr., vol. 8, No. 5, pp. 998-1008 (Sep./Oct. 2002).
Liu et al.,Ordered anodic alumina nanochannels on focused-ion-beam-prepatterned aluminum surfaces, Appl. Phys. Lett., vol. 78, No. 1, pp. 120-122 (Jan. 2001).
Maire et al.,In Situ X-Ray Tomography Measurements of Deformation in Cellular Solids, MRS Bulletin, pp. 284-289 (Apr. 2003).
Masuda et al.,Highly ordered nanochannel-array architecture in anodic alumina, App. Phys. Lett, vol. 71 No. 19, pp. 2770-2772 (Nov. 1997).
Nadeem et al.,Fabrication of Microstructures Using Aluminum Anodization Techniques, pp. 274-277 (pre-2004).
Oh et al.,Preparation and Pore-Characteristics Control of Nano-Porous Materials Using Organometallic Building Blocks, 4 Carbon Science, No. 1, pp. 1-9 (Mar. 2003).
Onck,Scale Effects in Cellular Metals, MRS Bulletin, pp. 279-283 (Apr.
Busch Brett W.
Fishburn Fred D.
Rominger James
Micro)n Technology, Inc.
Tsai H. Jey
Wells St. John P.S.
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