Methods of forming a plurality of capacitors

Details Methods of forming a plurality of capacitors Methods of forming a plurality of capacitors

2005-05-18

2009-06-09

Nguyen, Thanh (Department: 2893)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S254000, C438S256000, C438S396000, C257SE21396

Reexamination Certificate

active

07544563

ABSTRACT:
The invention includes methods and integrated circuitry. Pillars project outwardly from openings in a first material over individual capacitor storage node locations. Insulative material is deposited over the first material laterally about sidewalls of the projecting pillars, and is anisotropically etched effective to expose underlying first material and leave electrically insulative material received laterally about the sidewalls of the projecting pillars. Openings are formed within a second material to the pillars. The pillars are etched from the substrate through the openings in the second material, and individual capacitor electrodes are formed within the openings in electrical connection with the storage node locations. The individual capacitor electrodes have the anisotropically etched insulative material received laterally about their outer sidewalls. The individual capacitor electrodes are incorporated into a plurality of capacitors. Other implementations and aspects are contemplated.

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J.P. O'Sul

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