Methods of forming a pattern of a semiconductor device

Details Methods of forming a pattern of a semiconductor device Methods of forming a pattern of a semiconductor device

2011-06-21

2011-06-21

Walke, Amanda C. (Department: 1722)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

C430S273100, C430S913000, C430S927000, C430S905000

Reexamination Certificate

active

07964332

ABSTRACT:
In polymers for an anti-reflective coating, compositions for an anti-reflective coating and methods of forming a pattern of a semiconductor device using the same, the compositions for an anti-reflective coating include a polymer that includes a first repeating unit having a basic side group, a second repeating unit having a light-absorbing group, and a third repeating unit having a cross-linkable group; a photoacid generator; a cross-linking agent; and a solvent. The polymer for the anti-reflective coating, which may have a basic side group chemically bound to a backbone of the polymer, may properly adjust diffusion of an acid in an anti-reflective coating layer to improve the profile of a pattern.

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MAchine translation of JP2006009694A (no date).

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