Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-10-17
2006-10-17
Clark, S. V. (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S750000
Reexamination Certificate
active
07122870
ABSTRACT:
A method of forming a gate electrode is described, comprising forming a dielectric layer on a substrate, forming a first metal layer having a first work function on the dielectric layer, forming a second metal layer having a second work function on the first metal layer, such that a gate electrode is formed on the dielectric layer which has a work function that is determined from the work function of the alloy of the two types of metal. The work function of a microelectronic transistor can be varied or “tuned” depending on the precise definition and control of the metal types, layer sequence, individual layer thickness and total number of layers.
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Barnak John
Borla Collin
Doczy Mark
Jensen Jacob M.
Kuhn Markus
Clark S. V.
Ortiz Kathy J.
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