Methods of forming a layer for barrier applications in an...

Details Methods of forming a layer for barrier applications in an... Methods of forming a layer for barrier applications in an...

2008-03-04

2009-11-17

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S513000, C438S700000, C257SE21054, C257SE21218, C257SE21277, C257SE21293, C257SE21319

Reexamination Certificate

active

07618893

ABSTRACT:
Methods of forming a barrier layer are provided. In one embodiment, the method includes providing a substrate into a physical valor deposition (PVD) chamber, supplying at least two reactive gases and an inert gas into the PVD chamber, sputtering a source material from a target disposed in the processing chamber in the presence of a plasma formed from the gas mixture, and forming a metal containing dielectric layer on the substrate from the source material. In another embodiment, the method includes providing a substrate into a PVD chamber, supplying a reactive gas the PVD chamber, sputtering a source material from a target disposed in the PVD chamber in the presence of a plasma formed from the reactive gas, forming a metal containing dielectric layer on the substrate from the source material, and post treating the metal containing layer in presence of species generated from a remote plasma chamber.

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