Methods of forming a contact structure

Details Methods of forming a contact structure Methods of forming a contact structure

2011-01-11

2011-01-11

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S634000, C438S699000, C257SE21305

Reexamination Certificate

active

07867902

ABSTRACT:
In a method of forming a contact structure, a first insulation layer including a first contact hole is formed on a substrate. A metal layer including tungsten is formed to fill the first contact hole. A planarization process is performed on the metal layer until the first insulation layer is exposed to form a first contact. A second contact is grown from the first contact. The second contact is formed without performing a photolithography process and an etching process to prevent misalignments.

REFERENCES:
patent: 2006/0141771 (2006-06-01), Jang
patent: 2006/0151887 (2006-07-01), Oh et al.
patent: 2008/0173931 (2008-07-01), Ho et al.
patent: 2008/0247214 (2008-10-01), Ufert
patent: 2001-053026 (2001-02-01), None
patent: 100253355 (2000-01-01), None
patent: 1020020048615 (2002-06-01), None

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