Methods of fabrication employing nanoscale mandrels

Details Methods of fabrication employing nanoscale mandrels Methods of fabrication employing nanoscale mandrels

2006-07-14

2009-06-30

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S258000, C438S508000, C438S508000, C257S330000

Reexamination Certificate

active

07553730

ABSTRACT:
Synthetic nanopore fabrication methods and structures are provided. Nanoscale transistor fabrication methods and structures are provided.

REFERENCES:
patent: 6806141 (2004-10-01), Kamins
patent: 2003/0116531 (2003-06-01), Kamins et al.
patent: 2008/0113155 (2008-05-01), Melechko et al.

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