Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-11-06
2008-12-02
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21014
Reexamination Certificate
active
07459359
ABSTRACT:
A method of forming a field effect transistor includes forming a vertical channel protruding from a substrate including a source/drain region junction between the vertical channel and the substrate, and forming an insulating layer extending on a side wall of the vertical channel toward the substrate to beyond the source/drain region junction. The method may also include forming a nitride layer extending on the side wall away from the substrate to beyond the insulating layer, forming a second insulating layer extending on the side wall that is separated from the channel by the nitride layer, and forming a gate electrode extending on the side wall toward the substrate to beyond the source/drain region junction.
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Choi Si-Young
Chung U-In
Lee Jong-Ho
Park Tai-Su
Yoon Eui-Joon
Coleman W. David
Myers Bigel Sibley & Sajovec P.A.
Samsung Electronic Co. Ltd.
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