Methods of fabricating tungsten contacts with tungsten...

Details Methods of fabricating tungsten contacts with tungsten... Methods of fabricating tungsten contacts with tungsten...

2007-03-13

2007-03-13

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S644000, C438S647000, C438S675000, C257SE21585

Reexamination Certificate

active

10920482

ABSTRACT:
A method forming a tungsten contact can include forming a contact hole in an interlayer dielectric layer to expose a portion of an underlying silicon based substrate and to form a side wall of the contact hole. A tungsten silicide layer can be formed on at least on the exposed portion of the substrate. A tungsten nitride layer can be conformally formed on a surface of the interlayer dielectric layer, on the tungsten silicide layer and on the side wall. A contact tungsten layer can be formed on the tungsten nitride layer to fill the contact hole. Related apparatus and contacts are also disclosed.

REFERENCES:
patent: 6207558 (2001-03-01), Singhvi et al.
patent: 6255187 (2001-07-01), Horii
patent: 6284646 (2001-09-01), Leem
patent: 6429493 (2002-08-01), Asahina et al.
patent: 6524952 (2003-02-01), Srinivas et al.
patent: 2003/0129828 (2003-07-01), Cohen
patent: 2003/0143328 (2003-07-01), Chen et al.
patent: 2000-040673 (2000-02-01), None
patent: 1019990059074 (1999-07-01), None
patent: 100274603 (2000-09-01), None
patent: 000061705 (2000-10-01), None
patent: 1020000061705 (2000-10-01), None
patent: 1020020032168 (2002-05-01), None
patent: 1020030023286 (2003-03-01), None
patent: 1020030023286 (2005-03-01), None
Notice to File a Response/Amendment to the Examination Report for Korean patent application 10-2003-0057264 mailed on Jul. 11, 2005.

Affiliated with

Also associated with

Rating

Methods of fabricating tungsten contacts with tungsten... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of fabricating tungsten contacts with tungsten..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of fabricating tungsten contacts with tungsten... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3753286