Methods of fabricating transistors in semiconductor devices

Details Methods of fabricating transistors in semiconductor devices Methods of fabricating transistors in semiconductor devices

2006-12-26

2006-12-26

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S259000, C438S270000, C438S294000

Reexamination Certificate

active

07153732

ABSTRACT:
A example disclosed semiconductor fabrication method includes forming a well region in a semconductor substrate where device isolation structures are formed, depositing a buffer oxide layer and a nitride layer on the semiconductor substrate, forming a dummy gate by patterning the nitride layer; depositing a liner oxide layer and an insulation layer on the buffer oxide layer and the dummy gate and performing a planarization process, removing the dummy gate and implanting ions, removing the liner oxide layer and the insulation layer and performing a thermal treatment, and forming a polysilicon gate electrode by using the buffer oxide layer as a gate oxide layer.

REFERENCES:
patent: 4505027 (1985-03-01), Schwabe et al.
patent: 4885617 (1989-12-01), Mazure-Espejo et al.
patent: 6090672 (2000-07-01), Wanlass
patent: 2003/0235943 (2003-12-01), Trivedi
patent: 2004/0084734 (2004-05-01), Matsuo

Affiliated with

Also associated with

Rating

Methods of fabricating transistors in semiconductor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of fabricating transistors in semiconductor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of fabricating transistors in semiconductor devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3704936