Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-10-23
2007-10-23
Nguyen, Cuong (Department: 2811)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S275000, C438S587000, C438S637000
Reexamination Certificate
active
11705945
ABSTRACT:
Unit cells of a static random access memory (SRAM) are provided including an integrated circuit substrate and first and second active regions. The first active region is provided on the integrated circuit substrate and has a first portion and a second portion. The second portion is shorter than the first portion. The first portion has a first end and a second end and the second portion extends out from the first end of the first portion. The second active region is provided on the integrated circuit substrate. The second active region has a third portion and a fourth portion. The fourth portion is shorter than the third portion. The third portion is remote from the first portion of the first active region and has a first end and a second end. The fourth portion extends out from the second end of the third portion towards the first portion of the first active region and is remote from the second portion of the first active region. Methods of forming SRAM cells are also described.
REFERENCES:
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patent: 5396100 (1995-03-01), Yamasaki et al.
patent: 6417545 (2002-07-01), Sakaguchi
patent: 6569742 (2003-05-01), Taniguchi et al.
patent: 7109126 (2006-09-01), Chakihara et al.
patent: 7179737 (2007-02-01), Nishida et al.
Nguyen Cuong
Nyers Bigel Sibley & Sajovec PA
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