Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-10-10
2006-10-10
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S105000, C438S931000, C257S077000, C257S328000, C257S331000
Reexamination Certificate
active
07118970
ABSTRACT:
MOS channel devices and methods of fabricating such devices having a hybrid channel are provided. Exemplary devices include vertical power MOSFETs that include a hybrid well region of silicon carbide and methods of fabricating such devices are provided. The hybrid well region may include an implanted p-type silicon carbide well portion in a p-type silicon carbide epitaxial layer, an implanted p-type silicon carbide contact portion that contacts the implanted p-type silicon carbide well portion and extends to a surface of the p-type epitaxial layer and/or an epitaxial p-type silicon carbide portion, at least a portion of the epitaxial p-type silicon carbide well portion corresponding to a p-type channel region of the MOSFET.
REFERENCES:
patent: 3629011 (1971-12-01), Tohi et al.
patent: 4466172 (1984-08-01), Batra
patent: 4811065 (1989-03-01), Cogan
patent: 5111253 (1992-05-01), Korman et al.
patent: 5170231 (1992-12-01), Fujii et al.
patent: 5184199 (1993-02-01), Fujii et al.
patent: 5270554 (1993-12-01), Palmour
patent: 5348895 (1994-09-01), Smayling et al.
patent: 5384270 (1995-01-01), Ueno
patent: 5385855 (1995-01-01), Brown et al.
patent: 5393999 (1995-02-01), Malhi
patent: 5396085 (1995-03-01), Baliga
patent: 5506421 (1996-04-01), Palmour
patent: 5510281 (1996-04-01), Ghezzo et al.
patent: 5510630 (1996-04-01), Agarwal et al.
patent: 5629531 (1997-05-01), Palmour
patent: 5710059 (1998-01-01), Rottner
patent: 5726463 (1998-03-01), Brown et al.
patent: 5734180 (1998-03-01), Malhi
patent: 5763905 (1998-06-01), Harris
patent: 5804483 (1998-09-01), Harris
patent: 5814859 (1998-09-01), Ghezzo et al.
patent: 5837572 (1998-11-01), Gardner et al.
patent: 5851908 (1998-12-01), Harris et al.
patent: 5877041 (1999-03-01), Fuller
patent: 5917203 (1999-06-01), Bhatnagar et al.
patent: 5972801 (1999-10-01), Lipkin et al.
patent: 5976936 (1999-11-01), Miyajima et al.
patent: 6020600 (2000-02-01), Miyajima et al.
patent: 6025233 (2000-02-01), Terasawa
patent: 6025608 (2000-02-01), Harris et al.
patent: 6054352 (2000-04-01), Ueno
patent: 6096607 (2000-08-01), Ueno
patent: 6100169 (2000-08-01), Suvorov et al.
patent: 6107142 (2000-08-01), Suvorov et al.
patent: 6117735 (2000-09-01), Ueno
patent: 6133587 (2000-10-01), Takeuchi et al.
patent: 6165822 (2000-12-01), Okuno et al.
patent: 6180958 (2001-01-01), Cooper, Jr.
patent: 6204135 (2001-03-01), Peters et al.
patent: 6221700 (2001-04-01), Okuno et al.
patent: 6228720 (2001-05-01), Kitabatake et al.
patent: 6238967 (2001-05-01), Shiho et al.
patent: 6239463 (2001-05-01), Williams et al.
patent: 6246076 (2001-06-01), Lipkin et al.
patent: 6297100 (2001-10-01), Kumar et al.
patent: 6303508 (2001-10-01), Alok
patent: 6316791 (2001-11-01), Schorner et al.
patent: 6344663 (2002-02-01), Slater, Jr. et al.
patent: 6399996 (2002-06-01), Chang et al.
patent: 6420225 (2002-07-01), Chang et al.
patent: 6429041 (2002-08-01), Ryu et al.
patent: 6448160 (2002-09-01), Chang et al.
patent: 6452228 (2002-09-01), Okuno et al.
patent: 6455892 (2002-09-01), Okuno et al.
patent: 6551865 (2003-04-01), Kumar et al.
patent: 6573534 (2003-06-01), Kumar et al.
patent: 6593620 (2003-07-01), Hshieh et al.
patent: 6610366 (2003-08-01), Lipkin
patent: 6653659 (2003-11-01), Ryu et al.
patent: 6759684 (2004-07-01), Fukuda et al.
patent: 6767843 (2004-07-01), Lipkin et al.
patent: 6841812 (2005-01-01), Zhao
patent: 6940110 (2005-09-01), Takahashi et al.
patent: 6979863 (2005-12-01), Ryu
patent: 2002/0038891 (2002-04-01), Ryu et al.
patent: 2002/0047125 (2002-04-01), Fukuda et al.
patent: 2002/0102358 (2002-08-01), Das et al.
patent: 2002/0149022 (2002-10-01), Ryu et al.
patent: 2003/0089930 (2003-05-01), Zhao
patent: 2004/0119076 (2004-06-01), Ryu
patent: 2004/0211980 (2004-10-01), Ryu
patent: 2004/0212011 (2004-10-01), Ryu
patent: 19832329 (1998-02-01), None
patent: 19809554 (1998-09-01), None
patent: 19900171 (2000-12-01), None
patent: 10036208 (2002-02-01), None
patent: 0 637 069 (1995-02-01), None
patent: 1 058 317 (2000-12-01), None
patent: 1 204 145 (2002-08-01), None
patent: 01117363 (1989-05-01), None
patent: 03034466 (1991-02-01), None
patent: 03157974 (1991-07-01), None
patent: 08264766 (1996-10-01), None
patent: 09205202 (1997-08-01), None
patent: 10308501 (1998-11-01), None
patent: 11191559 (1999-07-01), None
patent: 11238742 (1999-08-01), None
patent: 11261061 (1999-09-01), None
patent: 11266017 (1999-09-01), None
patent: 11274487 (1999-10-01), None
patent: 2000049167 (2000-02-01), None
patent: 2000082812 (2000-03-01), None
patent: 2000106371 (2001-04-01), None
patent: WO 97/98754 (1997-03-01), None
patent: WO 97/39485 (1997-10-01), None
patent: WO 98/02916 (1998-01-01), None
patent: WO 98/02924 (1998-01-01), None
patent: WO 00/13236 (2000-03-01), None
Palmour et al. “SiC Device Technology: Remaining Issues,” Diamond and Related Materials. vol. 6, 1997, pp. 1400-1404.
Rao et al. “P-N Junction Formation in 6H-SiC by Acceptor Implantation into N-Type Substrate,” Nuclear Instruments and Methods in Physics Research B. vol. 106, 1995, pp. 333-338.
Rao et al. “Al and N Ion Implantations in 6H-SiC,” Silicon Carbide and Related Materials. 1995 Conf, Kyoto, Japan. Published 1996.
Capano, M.A., et al., Ionization Energies and Electron Mobilities in Phosphorus—and Nitrogen-Implanted 4H-Silicon Carbide, IEEE ICSCRM Conference 1999, Research Triangle Park, North Carolina (Oct. 10-13, 1999).
Patel, R., et al., Phosphorus-Implanted High-Voltage N.sup.+ P 4H-SiC Junction Rectifiers, Proceedings of 1998 International Symposium on Poer Semiconductor Devices & ICs, pp. 387-390 (Kyoto).
Dastidar, Sujoyita, A Study of P-Type Activation in Silicon Carbide, Thesis (Purdue University, May 1998).
International Search Report and the Written Opinion of the International Searching Authority corresponding to PCT/US2005/011130, mailed Nov. 28, 2005.
A.K. Agarwal, J.B. Casady, L.B. Rowland, W.F. Valek, and C.D. Brandt, “1400 V 4H-SiC Power MOSFET's,” Materials Science Forum vols. 264-268, pp. 989-992, 1998.
A.K. Agarwal, J.B. Casady, L.B. Rowland, W.F. Valek, M.H. White, and C.D. Brandt, “1.1 kV 4H-SiC Power UMOSFET's,”IEEE Electron Device Letters, vol. 18, No. 12, pp. 586-588, Dec. 1997.
A.K. Agarwal, N.S. Saks, S.S. Mani, V.S. Hegde and P.A. Sanger, “Investigation of Lateral RESURF, 6H-SiC MOSFETs,”Materials Science Forum, vols. 338-342, pp. 1307-1310, 2000.
A.K. Agarwal, S. Seshadri, and L.B. Rowland, “Temperature Dependence of Fowler-Nordheim Current in 6H-and 4H-SiC MOS Capacitors,”IEEE Electron Device Letters, vol. 18, No. 12, Dec. 1997, pp. 592-594.
A.V. Suvorov, L.A. Lipkin, G.M. Johnson, R. Singh and J.W. Palmour, “4H-SiC Self-Aligned Implant-Diffused Structure for Power DMOSFETs,”Materials Science Forumvols. 338-342, pp. 1275-1278, 2000.
Agarwal et al. “A Critical Look at the Performance Advantages and Limitations of 4H-SiC Power UMOSFET Structures,”1996 IEEE ISPSD and IC's Proc., May 20-23, 1996, pp. 119-122.
Baliga, Power Semiconductor Devices, Chapter 7, PWS Publishing, 1996.
Bhatnagar et al. “Comparison of 6H-SiC, 3C-SiC, and Si for Power Devices,”IEEE Transactions on Electron Devices, vol. 40, No. 3, Mar. 1993, pp. 645-655.
D. Alok, E. Arnold, and R. Egloff, “Process Dependence of Inversion Layer Mobility in 4H-SiC Devices,”Materials Science Forum, vols. 338-342, pp. 1077-1080, 2000.
Das, Mrinal K. Graduate thesis entitled,Fundamental Studies of the Silicon Carbide MOS Structure. Purdue University, 1999.
Fukuda et al. “Improvement of SiO2/4H-SiC Interface Using High-Temperature Hydrogen Annealing at Low Pressure and Vacuum Annealing,”Jpn. J. Appl. Phys. vol. 38, Apr. 1999, pp. 2306-2309.
G.Y. Chung, C.C. Tin, J.R. Williams, K. McDonald, M. Di Ventra, S.T. Pantelides, L.C. Feldman, and R.A. Weller, “Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide,”Applied Physics Letters, vol. 76, No. 13, pp. 1713-1715, Mar. 2000.
Das Mrinal Kanti
Ryu Sei-Hyung
Cree Inc.
Smith Matthew
Stark Jarrett
LandOfFree
Methods of fabricating silicon carbide devices with hybrid... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods of fabricating silicon carbide devices with hybrid..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of fabricating silicon carbide devices with hybrid... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3616096