Methods of fabricating silicon carbide devices with hybrid...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S105000, C438S931000, C257S077000, C257S328000, C257S331000

Reexamination Certificate

active

07118970

ABSTRACT:
MOS channel devices and methods of fabricating such devices having a hybrid channel are provided. Exemplary devices include vertical power MOSFETs that include a hybrid well region of silicon carbide and methods of fabricating such devices are provided. The hybrid well region may include an implanted p-type silicon carbide well portion in a p-type silicon carbide epitaxial layer, an implanted p-type silicon carbide contact portion that contacts the implanted p-type silicon carbide well portion and extends to a surface of the p-type epitaxial layer and/or an epitaxial p-type silicon carbide portion, at least a portion of the epitaxial p-type silicon carbide well portion corresponding to a p-type channel region of the MOSFET.

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