Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-02-08
2005-02-08
Gurley, Lynne A. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S630000, C438S648000, C438S649000, C438S655000, C438S656000, C438S676000, C438S678000, C438S680000, C438S681000, C438S682000, C438S685000
Reexamination Certificate
active
06852588
ABSTRACT:
Methods are provided for fabricating semiconductor structures and semiconductor device structures utilizing epitaxial Hf3Si2layers. A process in accordance with one embodiment of the invention begins by disposing a silicon substrate in a processing chamber. The pressure within the processing chamber and a temperature of the silicon substrate in the range of approximately 250° C. to approximately 700° C. is established. A layer of Hf3Si2then is grown overlying the silicon substrate at a rate in the range of about one (1) to about five (5) monolayers per minute.
REFERENCES:
patent: 6039803 (2000-03-01), Fitzgerald et al.
patent: 6797598 (2004-09-01), Lim et al.
patent: 20040040501 (2004-03-01), Vartstra
patent: 20040175882 (2004-09-01), Ahn et al.
Johnson-Steigelman et al.; “Hafnium Silicide Formation on Si (001)”; Laboratory for Surface Studies and Department of Physics, University of Wisconsin-Milwaukee, Wisconsin; pp 1-25.
Galakhov et al.; “X-ray Emission Spectra and Interfacial Solid-Phase Reactions in Hf/(001)Si System”; 350 Thin Solid Films; pp 143-146 (1999).
So et al.; “Formation and Electrical Properties of HfSi2Grown Thermally From Evaporated Hf and Si Films”; J.Vac.Sci.Technol. A3 (6); pp 2284-2288; (Nov./Dec. 1985).
Lee et al.; “Multiple Phase Structures of Hf Silicide Precipitated From Hf Silicate: An Atomic View”; J.Vac.Sci. Technol. A20(5); pp 1824-1827; (Sep./Oct. 2002).
Shinkai et al.; “Initial Silicide Formation Process of Single Oriented (002) Hf Film on Si and Its Diffusion Barrier Property”; Japanese Journal of Applied Physics, vol. 37; pp 2002-2006; (1998).
Zaima et al.; “Interfacial Solid-Phase Reactions, Crystallographic Structures, and Electrical Characteristics of Hf/(001) Si Systems”; J. Appl. Phys. 74(11); pp 6703-6709 (Dec. 1993).
Curless Jay A.
Liang Yong
Yu Zhiyi
Freescale Semiconductor Inc.
Gurley Lynne A.
Ingrassia Fisher & Lorenz P.C.
LandOfFree
Methods of fabricating semiconductor structures comprising... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods of fabricating semiconductor structures comprising..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of fabricating semiconductor structures comprising... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3449411