Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-04-22
2008-04-22
Cao, Phat X (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S254000, C257SE21657
Reexamination Certificate
active
11185559
ABSTRACT:
A semiconductor memory device includes a semiconductor substrate having an active region therein, an insulating layer on the substrate, and a lower electrode conductive pad extending through the insulating layer. The lower electrode conductive pad electrically contacts the active region at a lower surface of the lower electrode conductive pad. A lower electrode conductive plug on at least a portion of the lower electrode conductive pad electrically contacts the lower electrode conductive pad at an upper surface and at one sidewall thereof. The semiconductor device may further include a bitline conductor on the substrate adjacent the lower electrode conductive plug and an insulating spacer on a sidewall of the bitline conductor adjacent the lower electrode conductive plug. The insulating spacer may separate the lower electrode conductive plug from the bitline conductor by a distance sufficient to prevent electrical contact therebetween. Related methods are also discussed.
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Notice to Submit Response corresponding to Korean Patent Application No. 10-2004-0083972 mailed Feb. 24, 2006.
Cao Phat X
Myers Bigel & Sibley Sajovec, PA
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