Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-07-24
2007-07-24
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S150000, C438S197000, C438S489000, C438S626000, C257S067000, C257S068000
Reexamination Certificate
active
11065750
ABSTRACT:
Methods of fabricating a semiconductor integrated circuit having thin film transistors using an SEG technique are provided. The methods include forming an inter-layer insulating layer on a single-crystalline semiconductor substrate. A single-crystalline semiconductor plug extends through the inter-layer insulating layer, and a single-crystalline epitaxial semiconductor pattern is in contact with the single-crystalline semiconductor plug on the inter-layer insulating layer. The single-crystalline epitaxial semiconductor pattern is at least partially planarized to form a semiconductor body layer on the inter-layer insulating layer, and the semiconductor body layer is patterned to form a semiconductor body. As a result, the semiconductor body includes at least a portion of the single-crystalline epitaxial semiconductor pattern. Thus, the semiconductor body has an excellent single-crystalline structure. Semiconductor integrated circuits fabricated using the methods are also provided.
REFERENCES:
patent: 4498226 (1985-02-01), Inoue et al.
patent: 4670088 (1987-06-01), Tsaur et al.
patent: 5122476 (1992-06-01), Fazan et al.
patent: 5124276 (1992-06-01), Samata et al.
patent: 5852310 (1998-12-01), Kadosh et al.
patent: 6022766 (2000-02-01), Chen et al.
patent: 6180453 (2001-01-01), Sung et al.
patent: 6620659 (2003-09-01), Emmma et al.
patent: 2005/0133789 (2005-06-01), Oh et al.
patent: 2005/0221544 (2005-10-01), Kwak et al.
patent: 2005/0277235 (2005-12-01), Son et al.
patent: 2006/0048702 (2006-03-01), Son et al.
patent: 2006/0097319 (2006-05-01), Kim et al.
patent: 1999-0085769 (1999-12-01), None
patent: 2001-0063623 (2001-07-01), None
Cho Won-Seok
Hwang Byung-Jun
Jang Jae-Hoon
Jung Soon-Moon
Kim Jong-Hyuk
Le Thao P.
Marger & Johnson & McCollom, P.C.
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