Methods of fabricating semiconductor devices having thin...

Details Methods of fabricating semiconductor devices having thin... Methods of fabricating semiconductor devices having thin...

2007-12-25

2007-12-25

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S637000, C438S197000, C438S198000, C438S199000, C257SE51005, C257SE29119, C257SE29004

Reexamination Certificate

active

11098648

ABSTRACT:
Methods of fabricating semiconductor devices are provided. An interlayer insulating layer is provided on a single crystalline semiconductor substrate. A single crystalline semiconductor plug is provided that extends through the interlayer insulating layer and a molding layer pattern is provided on the semiconductor substrate and the single crystalline semiconductor plug. The molding layer pattern defines an opening therein that at least partially exposes a portion of the single crystalline semiconductor plug. A single crystalline semiconductor epitaxial pattern is provided on the exposed portion of single crystalline semiconductor plug using a selective epitaxial growth technique that uses the exposed portion of the single crystalline semiconductor plug as a seed layer. A single crystalline semiconductor region is provided in the opening. The single crystalline semiconductor region includes at least a portion of the single crystalline semiconductor epitaxial pattern.

REFERENCES:
patent: 5156987 (1992-10-01), Sandhu et al.
patent: 6022766 (2000-02-01), Chen et al.
patent: 6525340 (2003-02-01), Colavito et al.
patent: 6653714 (2003-11-01), Matsuno et al.
patent: 2001/0023953 (2001-09-01), Schuegraf et al.
patent: 2002/0119624 (2002-08-01), Schuegraf et al.
patent: 2002/0197794 (2002-12-01), Lee
patent: 10-027887 (1998-01-01), None
patent: 11-233789 (1999-08-01), None
patent: 10-2003-0002745 (2003-01-01), None

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