Methods of fabricating semiconductor devices

Details Methods of fabricating semiconductor devices Methods of fabricating semiconductor devices

2006-11-14

2006-11-14

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S424000, C438S435000, C257SE21540, C257SE21545

Reexamination Certificate

active

07135371

ABSTRACT:
Methods of fabricating semiconductor devices are disclosed. One example method includes forming a gate oxide and a gate electrode on a semiconductor substrate; performing a first ion implantation process for the formation of an LDD (lightly doped drain) region in the substrate; forming spacers on the sidewalls of the gate electrode; performing a second ion implantation process for the formation of a junction region in the substrate using the spacers as mask; forming a trench for device isolation by removing selectively the top portion of the substrate between the spacers; forming a sidewall oxide layer on the resulting substrate; forming a diffusion barrier on the sidewall oxide layer; depositing a gap filling insulation layer over the diffusion barrier; planarizing the gap filling insulating layer; and removing selectively some part of the gap filling insulation layer to form contact holes.

REFERENCES:
patent: 5597747 (1997-01-01), Chen
patent: 6156854 (2000-12-01), Shamshoum et al.
patent: 6281082 (2001-08-01), Chen et al.
patent: 6417097 (2002-07-01), Hwang et al.
patent: 0678912 (1995-10-01), None

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