Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2009-12-17
2011-10-18
Nguyen, Ha Tran T (Department: 2829)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S585000, C257SE21700
Reexamination Certificate
active
08039325
ABSTRACT:
A method of fabricating a semiconductor device having a capacitorless one-transistor memory cell includes forming a first floating body pattern on a lower insulating layer of a substrate and a first gate pattern crossing over the first floating body pattern and covering sidewalls of the first floating body pattern is formed. The first floating body pattern at both sides of the first gate pattern is partially etched to form a protrusion portion extending between and above the partially etched regions, and first impurity regions are formed in the partially etched regions of the first floating body pattern.
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Kim Sung-Hwan
Oh Yong-Chul
Song Ho-Ju
Brown Valerie N
Lee & Morse P.C.
Nguyen Ha Tran T
Samsung Electronics Co,. Ltd.
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