Methods of fabricating p-type transistors including...

Details Methods of fabricating p-type transistors including... Methods of fabricating p-type transistors including...

2006-06-06

2008-09-09

Lindsay, Jr., Walter L. (Department: 2812)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

C438S486000, C438S487000, C438S621000

Reexamination Certificate

active

07422965

ABSTRACT:
A method of fabricating a transistor device includes forming a non-crystalline germanium layer on a seed layer. The non-crystalline germanium layer is selectively locally heated to about a melting point thereof to form a single-crystalline germanium layer on the seed layer. The non-crystalline germanium layer may be selectively locally heated, for example, by applying a laser to a portion of the non-crystalline germanium layer. Related devices are also discussed.

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Notice to Submit Response corresponding to Korean Patent Application No. 10-2005-0054802 mailed Oct. 26, 2006.

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