Methods of fabricating oxide layers by plasma nitridation...

Details Methods of fabricating oxide layers by plasma nitridation... Methods of fabricating oxide layers by plasma nitridation...

2006-05-30

2006-05-30

Luu, Chuong Anh (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

C438S270000, C438S271000

Reexamination Certificate

active

07053006

ABSTRACT:
Oxide layers, including gate oxide layers having different thicknesses, are formed, plasma nitridized, and oxidized in an oxygen atmosphere containing hydrogen at a high temperature. Electron trap sites and stress occurring during plasma nitridation may be removed during oxidation.

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Notice to Submit Response, KR Application No. 2002-0069661, Aug. 30, 2004.
Jin-Seong Park et al., “Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent”, Electrochemical and Solid State Letters, 4 (4) C17-C19 (2001).

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