Methods of fabricating nonvolatile memory using a quantum dot

Details Methods of fabricating nonvolatile memory using a quantum dot Methods of fabricating nonvolatile memory using a quantum dot

2008-03-04

2008-03-04

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S962000, C257S316000

Reexamination Certificate

active

11026715

ABSTRACT:
A method of fabricating a nonvolatile memory using quantum dots is disclosed. An example method sequentially forms a first insulation layer and a second insulation layer on a substrate where a predetermined device is formed. The example method also forms a hard mask by etching the second insulation layer, deposits silicon on the substrate where the hard mask is formed, forms quantum dots by etching the silicon through an etchback process, removes the hard mask, forms a third insulation layer on the substrate where the quantum dots are formed, and deposits a conductive layer on the third insulation and patterning it to form a gate.

REFERENCES:
patent: 4581621 (1986-04-01), Reed
patent: 5291034 (1994-03-01), Allam et al.
patent: 5889288 (1999-03-01), Futatsugi
patent: 6093945 (2000-07-01), Yang
patent: 6124192 (2000-09-01), Jeng et al.
patent: 6351007 (2002-02-01), Fukushima et al.
patent: 6504206 (2003-01-01), Sung et al.
patent: 6730531 (2004-05-01), Park
patent: 2002/0167839 (2002-11-01), Forbes et al.
patent: 2002/0173100 (2002-11-01), Tanigami
patent: 2003/0132500 (2003-07-01), Jones et al.
patent: 2003/0153151 (2003-08-01), Choi et al.

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