Methods of fabricating nonvolatile memory device

Details Methods of fabricating nonvolatile memory device Methods of fabricating nonvolatile memory device

2006-10-10

2006-10-10

Dang, Trung (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S275000, C438S289000

Reexamination Certificate

active

07118965

ABSTRACT:
A fabricating method of a nonvolatile memory device is disclosed. A disclosed method comprises: implanting ions into an active region of a semiconductor substrate to form a well of a low voltage transistor and adjust its threshold voltage; implanting ions into an active region of the semiconductor substrate to form a well of a high voltage transistor and adjust its threshold voltage, thereby forming a conductive region; depositing an ONO layer on the semiconductor substrate; patterning and etching the ONO layer to form an ONO structure; and forming a gate oxide layer on the semiconductor substrate.

REFERENCES:
patent: 6281089 (2001-08-01), Chen
patent: 6362049 (2002-03-01), Cagnina et al.
patent: 6458642 (2002-10-01), Yeh et al.
patent: 6703670 (2004-03-01), Lines
patent: 6787419 (2004-09-01), Chen et al.
patent: 6803284 (2004-10-01), Hwang
patent: 6815274 (2004-11-01), Hsieh et al.
patent: 2002/0016081 (2002-02-01), Aloni et al.
patent: 2002/0127799 (2002-09-01), Kim
patent: 2003/0151109 (2003-08-01), Taniguchi et al.

Affiliated with

Also associated with

Rating

Methods of fabricating nonvolatile memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of fabricating nonvolatile memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of fabricating nonvolatile memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3664998