Methods of fabricating non-volatile memory devices including...

Details Methods of fabricating non-volatile memory devices including... Methods of fabricating non-volatile memory devices including...

2006-12-12

2006-12-12

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S315000

Reexamination Certificate

active

07148106

ABSTRACT:
Non-volatile memory devices can be fabricated by forming a tunnel dielectric layer on a semiconductor substrate, subjecting the semiconductor substrate having the tunnel dielectric layer to an atomic layer deposition (ALD) process to form nanocrystals on the tunnel dielectric layer, removing the semiconductor substrate having the nanocrystals from an atomic layer deposition chamber, forming a control gate dielectric layer on the semiconductor substrate having the nanocrystal, and forming a control gate electrode on the semiconductor substrate having the control gate dielectric layer.

REFERENCES:
patent: 6297095 (2001-10-01), Muralidhar et al.
patent: 6320784 (2001-11-01), Muralidhar et al.
patent: 6344403 (2002-02-01), Madhukar et al.
patent: 6713812 (2004-03-01), Hoefler et al.
patent: 6784103 (2004-08-01), Rao et al.
patent: 6808986 (2004-10-01), Rao et al.
patent: 6833161 (2004-12-01), Wang et al.
patent: 6888739 (2005-05-01), Forbes
patent: 6902763 (2005-06-01), Elers et al.
patent: 6933225 (2005-08-01), Werkhoven et al.
patent: 2002/0028541 (2002-03-01), Lee et al.
patent: 2003/0235064 (2003-12-01), Batra et al.
patent: 2005/0067651 (2005-03-01), Kim et al.
patent: 2000-340682 (2000-12-01), None
patent: 10-0434553 (2004-05-01), None
IC Knowledge. Technology Backgrounder: Atomic Layer Deposition Excerpt. Jun. 16, 2004.
Liu et al.,Metal Nanocrystal Memories-Part I: Device Design and Fabrication,IEEE Transactions on Electron Devices, vol. 49, No. 9, Sep. 2002, pp. 1606-1622.

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