Methods of fabricating non-volatile memory devices

Details Methods of fabricating non-volatile memory devices Methods of fabricating non-volatile memory devices

2006-12-26

2006-12-26

Dang, Trung (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S261000, C438S262000

Reexamination Certificate

active

07153743

ABSTRACT:
Methods of fabricating non-volatile memory devices are disclosed. The resulting non-volatile memory devices include an additional protection film is formed on a control gate pattern to enable the control gate pattern to have a regular and smooth profile regardless of an etching process progressed intensively for removing an active cell isolation film from an active cell isolation trench by using the control gate pattern as a mask, so that the control gate pattern can avoid influence from the impurity even if an impurity injection process is progressed for forming a source diffusion layer, later.

REFERENCES:
patent: 6337244 (2002-01-01), Prall et al.
patent: 6534818 (2003-03-01), Hsu
patent: 6819592 (2004-11-01), Noguchi et al.
patent: 2003/0100172 (2003-05-01), Kim et al.
patent: 2004/0104412 (2004-06-01), Rhodes

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