Methods of fabricating non-volatile memory devices

Details Methods of fabricating non-volatile memory devices Methods of fabricating non-volatile memory devices

2011-01-11

2011-01-11

Lee, Hsien-ming (Department: 2823)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S527000, C257S623000, C257SE21619, C257SE21377

Reexamination Certificate

active

07867883

ABSTRACT:
A method of fabricating a semiconductor device includes forming a fin-shaped active region including opposing sidewalls and a surface therebetween protruding from a substrate, forming a gate structure on the surface of the active region, and performing an ion implantation process to form source/drain regions in the active region at opposite sides of the gate structure. The source/drain regions respectively include a first impurity region in the surface of the active region and second impurity regions in the opposing sidewalls of the active region. The first impurity region has a doping concentration that is greater than that of the second impurity regions. Related devices are also discussed.

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