Methods of fabricating MOS field effect transistors with...

Details Methods of fabricating MOS field effect transistors with... Methods of fabricating MOS field effect transistors with...

2006-05-30

2006-05-30

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S305000, C438S306000, C438S525000, C257SE21634

Reexamination Certificate

active

07052965

ABSTRACT:
MOSFETs with pocket regions are fabricated. A gate electrode layer is formed on a semiconductor substrate; and lightly doped drain regions are formed in the semiconductor substrate adjacent the gate electrode layer. A blocking pattern is formed on the semiconductor substrate where the gate electrode layer is formed. The blocking pattern is adjacent and spaced apart from the gate electrode layer a predetermined distance and exposes portions of the semiconductor substrate adjacent sidewalls of the gate electrode layer. Pocket regions are formed in the semiconductor substrate by implanting impurity ions using the gate electrode layer and the blocking pattern as an ion implantation mask.

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