Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-05-26
2000-09-12
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438306, 438232, 438514, 438682, 438630, 438649, H01L 2144
Patent
active
061177733
ABSTRACT:
A microelectronic device includes a first region having a first conductivity type. A second region having a second conductivity type contacts the first region at a junction therebetween. A metal silicide region contacts the second region at a contact surface apart from the junction. Impurities of the second conductivity type in the second region are concentrated between the contact surface and the junction, for example, in one or more subregions disposed between the contact surface and the junction. The subregions may include a first subregion adjacent the junction formed by an ion implantation at a first energy level, and a second subregion disposed between the first subregion and the contact surface formed by a second ion implantation at a different energy level. Related fabrication methods are also provided.
REFERENCES:
patent: 5672890 (1997-09-01), Nakajima
patent: 5719425 (1998-02-01), Akram et al.
patent: 5856693 (1999-01-01), Onishi
Bowers Charles
Nguyen Thanh
Samsung Electronics Co,. Ltd.
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