Methods of fabricating liquid crystal display elements and inter

Details Methods of fabricating liquid crystal display elements and inter Methods of fabricating liquid crystal display elements and inter

1996-11-22

1998-12-22

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438627, 438643, 438609, 438608, 438678, 349152, H01L 2144

Patent

active

058519181

ABSTRACT:
Methods of fabricating a liquid crystal display element on a substrate includes forming a thin film transistor on the substrate, the thin film transistor including a gate electrode covered by a channel region and a gate pad conductively connected to the gate electrode. A pad electrode is formed on the substrate, spaced apart from the gate pad. A portion of the gate pad and a portion of the pad electrode are exposed, and the exposed portion of the gate pad selectively plated to thereby form a conductive barrier layer on the exposed portion of the gate pad. A pixel electrode is then formed contacting the conductive barrier layer and the exposed portion of the pad electrode to thereby connect the gate pad and the pad electrode. Preferably, the selective plating includes electroless plating the exposed portion of the gate pad to thereby form the conductive barrier layer.

REFERENCES:
patent: 3989606 (1976-11-01), Kampert
patent: 4205428 (1980-06-01), Ernstoff et al.
patent: 4325990 (1982-04-01), Ferrier
patent: 5260234 (1993-11-01), Long
patent: 5384284 (1995-01-01), Doan et al.
patent: 5543946 (1996-08-01), Enomoto
S.Wolf & R. Tauber, "Silicon Processing for the VLSI Era" vol. 2, pp. 256-257, 1990.

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