Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-03-28
2006-03-28
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S271000
Reexamination Certificate
active
07018899
ABSTRACT:
Methods for fabricating LDMOS transistors are disclosed. A disclosed method includes: forming a device isolation structure in a semiconductor substrate through an STI process; forming a photoresist pattern exposing the device isolation structure; forming double diffused wells by implanting ions into the substrate; removing the exposed device isolation structure; and removing the photoresist pattern.
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DongbuAnam Semiconductor Inc.
Hanley Flight & Zimmerman LLC
Malsawma Lex H.
Smith Matthew
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