Methods of fabricating integrated circuit devices that...

Details Methods of fabricating integrated circuit devices that... Methods of fabricating integrated circuit devices that...

2008-01-08

2008-01-08

Vu, Hung (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S256000, C438S396000, C438S399000

Reexamination Certificate

active

10968233

ABSTRACT:
The present invention provides integrated circuit devices that include a semiconductor substrate having a semiconductor region of first conductivity type therein extending adjacent the surface of the substrate. The device further includes an electrically insulating layer with a contact hole in it that exposes the semiconductor region of first conductivity type on the surface of the semiconductor substrate. The device still further includes a poly-Si1-xGexconductive plug of first conductivity type that extends in the contact hole and is electrically connected to the semiconductor region of first conductivity type is provided. Related methods of fabricating integrated circuit devices are also provided.

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