Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-10-11
2005-10-11
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S256000, C438S399000, C438S586000, C438S638000, C438S639000, C438S672000, C438S696000, C438S739000
Reexamination Certificate
active
06953744
ABSTRACT:
The present invention provides methods of fabricating integrated circuit devices that include a microelectronic substrate and a conductive layer disposed on the microelectronic substrate. An insulating layer is disposed on the conductive layer and the insulating layer includes an overhanging portion that extends beyond the conductive layer. A sidewall insulating region is disposed laterally adjacent to a sidewall of the conductive layer and extends between the overhanging portion of the insulating layer and the microelectronic substrate.
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Kim Hyoung-Joon
Nam Byeong-Yun
Park Young-Wook
Myers Bigel & Sibley & Sajovec
Samsung Electronics Co,. Ltd.
Thomas Toniae M.
Wilczewski Mary
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