Methods of fabricating integrated circuit devices having...

Details Methods of fabricating integrated circuit devices having... Methods of fabricating integrated circuit devices having...

2008-01-22

2008-01-22

Cao, Phat X (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having junction gate

C438S199000, C438S279000, C257SE21611

Reexamination Certificate

active

11359840

ABSTRACT:
Integrated circuit devices are provided including an integrated circuit substrate and first, second and third spaced apart insulating regions in the integrated circuit substrate that define first and second active regions. A first gate electrode is provided on the first active region. The first gate electrode has a first portion on the first active region that extends onto the first insulating region and a second portion at an end of the first portion on the first insulating region. A second gate electrode is provided on the second active region. An insulating layer is provided on the first, second and third active regions defining a first gate contact hole that exposes at least a portion of the second portion of the first gate electrode. The first gate electrode is free of a gate contact hole on the first portion of the first gate electrode. A second gate contact hole is provided on the second active region that exposes at least a portion of the second gate electrode. Related methods of fabricating integrated circuit devices are also provided.

REFERENCES:
patent: 6223331 (2001-04-01), Juengling
patent: 6313508 (2001-11-01), Kobayashi
patent: 6815771 (2004-11-01), Kimura
patent: 04-211134 (1992-08-01), None
patent: H07-226506 (1995-08-01), None
patent: 2001-244424 (2001-09-01), None
patent: 1020010036271 (2001-05-01), None
Office Action issued by the Chinese Patent Office corresponding to Chinese Patent Application No. 200410003216.X, mailed Feb. 10, 2006.

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