Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from gaseous state combined with preceding...
Reexamination Certificate
2007-03-27
2007-03-27
Schillinger, Laura M. (Department: 2813)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Fluid growth from gaseous state combined with preceding...
C438S478000, C438S479000
Reexamination Certificate
active
10915665
ABSTRACT:
A gallium nitride layer is laterally grown into a trench in the gallium nitride layer, to thereby form a lateral gallium nitride semiconductor layer. At least one microelectronic device may then be formed in the lateral gallium nitride semiconductor layer. Dislocation defects do not significantly propagate laterally into the lateral gallium nitride semiconductor layer, so that the lateral gallium nitride semiconductor layer is relatively defect free.
REFERENCES:
patent: 4127792 (1978-11-01), Nakata
patent: 4522661 (1985-06-01), Morrison et al.
patent: 4651407 (1987-03-01), Bencuya
patent: 4865685 (1989-09-01), Palmour
patent: 4876210 (1989-10-01), Barnett et al.
patent: 4912064 (1990-03-01), Kong et al.
patent: 4946547 (1990-08-01), Palmour et al.
patent: 5122845 (1992-06-01), Manabe et al.
patent: 5156995 (1992-10-01), Fitzgerald, Jr. et al.
patent: RE34861 (1995-02-01), Davis et al.
patent: 5389571 (1995-02-01), Takeuchi et al.
patent: 5397736 (1995-03-01), Bauser et al.
patent: 5549747 (1996-08-01), Bozler et al.
patent: 5583880 (1996-12-01), Shakuda
patent: 5602418 (1997-02-01), Imai et al.
patent: 5710057 (1998-01-01), Kenney
patent: 5760426 (1998-06-01), Marx et al.
patent: 5786606 (1998-07-01), Nishio et al.
patent: 5798537 (1998-08-01), Nitta
patent: 5815520 (1998-09-01), Furushima
patent: 5877070 (1999-03-01), Goesele et al.
patent: 5880485 (1999-03-01), Marx et al.
patent: 5912477 (1999-06-01), Negley
patent: 5915194 (1999-06-01), Powell et al.
patent: 6051849 (2000-04-01), Davis et al.
patent: 6064078 (2000-05-01), Northrup et al.
patent: 6072819 (2000-06-01), Shakuda
patent: 6100104 (2000-08-01), Haerle
patent: 6100111 (2000-08-01), Konstantinov
patent: 6121121 (2000-09-01), Koide
patent: 6153010 (2000-11-01), Kiyoku et al.
patent: 6156584 (2000-12-01), Itoh et al.
patent: 6177359 (2001-01-01), Chen et al.
patent: 6177688 (2001-01-01), Linthicum et al.
patent: 6255198 (2001-07-01), Linthicum et al.
patent: 6261929 (2001-07-01), Gehrke et al.
patent: 6265289 (2001-07-01), Zheleva et al.
patent: 6325850 (2001-12-01), Beaumont et al.
patent: 6376339 (2002-04-01), Linthicum et al.
patent: 6380108 (2002-04-01), Linthicum et al.
patent: 6403451 (2002-06-01), Linthicum et al.
patent: 6462355 (2002-10-01), Linthicum et al.
patent: 6486042 (2002-11-01), Gehrke et al.
patent: 6489221 (2002-12-01), Gehrke et al.
patent: 6521514 (2003-02-01), Gehrke et al.
patent: 6545300 (2003-04-01), Gehrke et al.
patent: 6586778 (2003-07-01), Linthicum et al.
patent: 6602764 (2003-08-01), Linthicum et al.
patent: 6617261 (2003-09-01), Wong et al.
patent: 6621148 (2003-09-01), Linthicum et al.
patent: 6686261 (2004-02-01), Gehrke et al.
patent: 6849864 (2005-02-01), Nagahama et al.
patent: 6864160 (2005-03-01), Linthicum et al.
patent: 6897483 (2005-05-01), Zheleva et al.
patent: 7095062 (2006-08-01), Linthicum et al.
patent: 2001/0007242 (2001-07-01), Davis et al.
patent: 2001/0008299 (2001-07-01), Linthicum et al.
patent: 2001/0008791 (2001-07-01), Gehrke et al.
patent: 2001/0039102 (2001-11-01), Zheleva et al.
patent: 2001/0041427 (2001-11-01), Gehrke et al.
patent: 2002/0013036 (2002-01-01), Gehrke et al.
patent: 2002/0022287 (2002-02-01), Linthicum et al.
patent: 2002/0031851 (2002-03-01), Linthicum et al.
patent: 2002/0069816 (2002-06-01), Gehrke et al.
patent: 2002/0110997 (2002-08-01), Linthicum et al.
patent: 2002/0111044 (2002-08-01), Linthicum et al.
patent: 2002/0148534 (2002-10-01), Davis et al.
patent: 2002/0179911 (2002-12-01), Linthicum et al.
patent: 2003/0092230 (2003-05-01), Koike et al.
patent: 2003/0092263 (2003-05-01), Koike et al.
patent: 2003/0114017 (2003-06-01), Wong et al.
patent: 2003/0119239 (2003-06-01), Koike et al.
patent: 2003/0134446 (2003-07-01), Koike et al.
patent: 2003/0194828 (2003-10-01), Zheleva et al.
patent: 2003/0207551 (2003-11-01), Gehrke et al.
patent: 2004/0029365 (2004-02-01), Linthicum et al.
patent: 2004/0152321 (2004-08-01), Gehrke et al.
patent: 2004/0206978 (2004-10-01), Saxler
patent: 2004/0224484 (2004-11-01), Fareed et al.
patent: 2004/0251519 (2004-12-01), Sugahara et al.
patent: 2005/0009304 (2005-01-01), Zheleva et al.
patent: 2005/0161702 (2005-07-01), Linthicum et al.
patent: 2258080 (1998-10-01), None
patent: 0 551 721 (1993-07-01), None
patent: 0 852 416 (1998-07-01), None
patent: 0 884 767 (1998-12-01), None
patent: 0 942 459 (1999-09-01), None
patent: 0 951 055 (1999-10-01), None
patent: 3-132016 (1991-06-01), None
patent: 4-188678 (1992-07-01), None
patent: 5-7016 (1993-01-01), None
patent: 5-41536 (1993-02-01), None
patent: 06163487 (1994-06-01), None
patent: 8-18159 (1996-01-01), None
patent: 08-064791 (1996-03-01), None
patent: 8-116093 (1996-05-01), None
patent: 8-125251 (1996-05-01), None
patent: 8-153931 (1996-06-01), None
patent: 9-93315 (1997-04-01), None
patent: 9-174494 (1997-06-01), None
patent: 9-181071 (1997-07-01), None
patent: 9-201477 (1997-07-01), None
patent: 9-277448 (1997-10-01), None
patent: 9-290098 (1997-10-01), None
patent: 9-324997 (1997-11-01), None
patent: 11-145516 (1999-05-01), None
patent: 11-251631 (1999-09-01), None
patent: 11-312825 (1999-11-01), None
patent: WO 97/11518 (1997-03-01), None
patent: WO 98/47170 (1998-10-01), None
patent: WO 99/18617 (1999-04-01), None
patent: WO 99/44224 (1999-09-01), None
Official Action with English language translation, JP 2000-553988, Jul. 29, 2005.
Akasaki et al.,Effects of AIN Buffer Layer on Crystallographic Structure and on Electrical and Optical Properties of GaN and Ga1−xAlxN(0<x≦0.4)Films Grown on Sapphire Substrate by MOVPE, Journal of Crystal Growth, vol. 98, 1989, pp. 209-219.
Allegretti et al.,In-situ Observation of GaAs Selective Epitaxy on GaAs(1 1 1)B Substrates, Journal of Crystal Growth, vol. 146, 1995, pp. 354-358.
Allegretti et al.,Periodic Supply Epitaxy: A New Approach for the Selective Area Growth of GaAs by Molecular Beam Epitaxy, Journal of Crystal Growth, vol. 156, 1995, pp. 1-10.
Amano et al.,Metalorganic Vapor Phase Epitaxial Growth of a High Quality GaN Film Using an AIN Buffer Layer, Applied Physics Letters, vol. 48, No. 5, Feb. 3, 1986, pp. 353-355.
Boo et al.,Growth of Hexagonal GaN Thin Films on Si(1 1 1)with Cubic SiC Buffer Layers, Journal of Crystal Growth 189-190, 1998, pp. 183-188.
Chen et al.,Dislocation Reduction in GaN Thin Films Via Lateral Overgrowth From Trenches, Applied Physics Letters, vol. 75, No. 14, Oct. 4, 1999, pp. 2062-2063.
Chen et al.,Silicon-on-Insulator: Why, How, and When, AIP Conference Proceedings, vol. 167, No. 1, Sep. 15, 1988, pp. 310-319.
Doverspike et al.,The Effect of GaN and AIN Buffer Layers on GaN Film Properties Grown on Both C-Plane and A-Plane Sapphire, Journal of Electronic Materials, vol. 24, No. 4, 1995, pp. 269-273.
Gallium Nitride-2000-Technology, Status, Applications, and Market Forecasts, Strategies Unlimited, Report SC-23, May 2000.
Gehrke et al.,Pendeo-Epitaxial Growth of Gallium Nitride on Silicon Substrates, Journal of Electronic Materials, vol. 29, No. 3, Mar. 2000, pp. 306-310.
Gehrke et al.,Pendeo-Epitaxial Growth of Gallium Nitride and Aluminum Nitride Films and Heterostructures on Silicon Carbide Substrate, MRS Internet J. Semicond. Res. 4S1, G3.2, 1999, 6 pp.
Givargizov,Other Approaches to Oriented Crystallization on Amorphous Substrates, Chapter 4, Oriented Crystallization on Amorpous Substrates, Plenum Press, 1991, pp. 221-264.
Gustafsson et al.,Investigations of High Quality GexSi1−xGrown by Heteroepitaxial Lateral Overgrowth Using Cathoduluminescence, Inst. Phys. Conf. Ser. No. 134: Section 11, Micros. Semicond. Mater. Conf., Oxford, Apr. 5-8, 1993, pp. 675-678.
Hiramatsu et al.,Growth Mechanism of GaN Grown on Sapphire With AIN Buffer Layer by MOVPE, Journal of Crystal Growth, vol. 115, 1991, pp. 628-633.
Hiramatsu et al.,Selective Area Growth and Epitaxial Lateral Overgrowth of GaN, Properties, Processing and Applications of Gallium Nitride and Related Semiconductors, EMIS Datareviews Series No. 23, 1998, pp. 440-446.
Honda et al.,Selective Area Growth of GaN Microstructures on Patterned(1 1 1)and(001)Si Substrates, 4thEuropean Workshop on
Davis Robert F.
Gehrke Thomas
Linthicum Kevin J.
Smith Scott A.
Thomson Darren B.
Myers Bigel Sibley & Sajovec P.A.
North Carolina State University
Schillinger Laura M.
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