Methods of fabricating floating trap non-volatile...

Details Methods of fabricating floating trap non-volatile... Methods of fabricating floating trap non-volatile...

2007-07-24

2007-07-24

Ha, Nathan W. (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

Reexamination Certificate

active

11030389

ABSTRACT:
Floating trap non-volatile memory devices and methods are provided. The memory devices include a semiconductor substrate and an adjacent gate electrode. Between the substrate and the gate electrode may be a tunneling insulating layer having a first dielectric constant, a blocking insulating layer having a second dielectric constant that is greater than the first dielectric constant, and a charge storage layer.

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