Methods of fabricating field isolated semiconductor devices incl

Details Methods of fabricating field isolated semiconductor devices incl Methods of fabricating field isolated semiconductor devices incl

1997-02-06

1999-01-12

Fourson, George

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

438699, 438692, 438978, H01L 276

Patent

active

058588604

ABSTRACT:
Isolated semiconductor devices are formed by forming field oxide regions in a face of a semiconductor substrate to define active regions therebetween. The field oxide regions extend to above the substrate face and include an oblique surface which extends from above the substrate face to the substrate face. A step reducing region is formed on a respective one of the oblique surfaces of the field oxide regions, extending onto the active regions at the substrate face. The step reducing region can reduce the steepness of the step between the substrate face and the field oxide regions, thereby facilitating further processing and reliability of the semiconductor devices.

REFERENCES:
patent: 4610078 (1986-09-01), Matsukawa et al.
patent: 5506168 (1996-04-01), Morita et al.
patent: 5554560 (1996-09-01), Hsue et al.
patent: 5672538 (1997-09-01), Liaw et al.

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