Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-05-17
2008-12-16
Tran, Thien F (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S285000
Reexamination Certificate
active
07465619
ABSTRACT:
A semiconductor-based device includes a channel layer, which includes a distal layer and a proximal layer in contact with the distal layer. The distal layer supports at least a portion of hole conduction for at least one p-channel component, and the proximal layer supports at least a portion of electron conduction for at least one n-channel component. The proximal layer has a thickness that permits a hole wave function to effectively extend from the proximal layer into the distal layer to facilitate hole conduction by the distal layer. A method for fabricating a semiconductor-based device includes providing a distal portion of a channel layer and providing a proximal portion of the channel layer.
REFERENCES:
patent: 4497683 (1985-02-01), Celler et al.
patent: 4692992 (1987-09-01), Hsu
patent: 4710788 (1987-12-01), Dämbkes et al.
patent: 4920076 (1990-04-01), Holland et al.
patent: 4990979 (1991-02-01), Otto
patent: 5079447 (1992-01-01), Lien et al.
patent: 5089872 (1992-02-01), Ozturk et al.
patent: 5155571 (1992-10-01), Wang et al.
patent: 5241197 (1993-08-01), Murakami et al.
patent: 5242847 (1993-09-01), Ozturk et al.
patent: 5266510 (1993-11-01), Lee
patent: 5266521 (1993-11-01), Lee et al.
patent: 5291439 (1994-03-01), Kauffmann et al.
patent: 5312766 (1994-05-01), Aronowitz et al.
patent: 5327375 (1994-07-01), Harari
patent: 5442205 (1995-08-01), Brasen et al.
patent: 5461243 (1995-10-01), Ek et al.
patent: 5479033 (1995-12-01), Baca et al.
patent: 5523592 (1996-06-01), Nakagawa et al.
patent: 5534713 (1996-07-01), Ismail et al.
patent: 5596527 (1997-01-01), Tomioka et al.
patent: 5617351 (1997-04-01), Bertin et al.
patent: 5683934 (1997-11-01), Candelaria
patent: 5739567 (1998-04-01), Wong
patent: 5777347 (1998-07-01), Bartelink
patent: 5780922 (1998-07-01), Mishra et al.
patent: 5786612 (1998-07-01), Otani et al.
patent: 5792679 (1998-08-01), Nakato
patent: 5808344 (1998-09-01), Ismail et al.
patent: 5847419 (1998-12-01), Imai et al.
patent: 5891769 (1999-04-01), Liaw et al.
patent: 5906951 (1999-05-01), Chu et al.
patent: 5951757 (1999-09-01), Dubbelday et al.
patent: 5963817 (1999-10-01), Chu et al.
patent: 5986287 (1999-11-01), Eberl et al.
patent: 5998807 (1999-12-01), Lustig et al.
patent: 6013134 (2000-01-01), Chu et al.
patent: 6058044 (2000-05-01), Sugiura et al.
patent: 6059895 (2000-05-01), Chu et al.
patent: 6096590 (2000-08-01), Chan et al.
patent: 6107653 (2000-08-01), Fitzgerald
patent: 6111267 (2000-08-01), Fischer et al.
patent: 6117750 (2000-09-01), Bensahel et al.
patent: 6130453 (2000-10-01), Mei et al.
patent: 6143636 (2000-11-01), Forbes et al.
patent: 6154475 (2000-11-01), Soref et al.
patent: 6204529 (2001-03-01), Lung et al.
patent: 6207977 (2001-03-01), Augusto
patent: 6228694 (2001-05-01), Doyle et al.
patent: 6235568 (2001-05-01), Murthy et al.
patent: 6249022 (2001-06-01), Lin et al.
patent: 6251755 (2001-06-01), Furukawa et al.
patent: 6266278 (2001-07-01), Harari et al.
patent: 6281532 (2001-08-01), Doyle et al.
patent: 6326664 (2001-12-01), Chau et al.
patent: 6339232 (2002-01-01), Takagi
patent: 6350993 (2002-02-01), Chu et al.
patent: 6399970 (2002-06-01), Kubo et al.
patent: 6407406 (2002-06-01), Tezuka
patent: 6437375 (2002-08-01), Beaman
patent: 6461945 (2002-10-01), Yu
patent: 6498359 (2002-12-01), Schmidt et al.
patent: 6555839 (2003-04-01), Fitzgerald
patent: 6563152 (2003-05-01), Roberds et al.
patent: 6583437 (2003-06-01), Mizuno et al.
patent: 6593191 (2003-07-01), Fitzgerald
patent: 6593625 (2003-07-01), Christiansen et al.
patent: 6593641 (2003-07-01), Fitzergald
patent: 6600170 (2003-07-01), Xiang
patent: 6603156 (2003-08-01), Rim
patent: 6605498 (2003-08-01), Murthy et al.
patent: 6621131 (2003-09-01), Murthy et al.
patent: 6657223 (2003-12-01), Wang et al.
patent: 6677192 (2004-01-01), Fitzgerald
patent: 6693641 (2004-02-01), Mehta et al.
patent: 6703688 (2004-03-01), Fitzergald
patent: 6730551 (2004-05-01), Lee et al.
patent: 6737670 (2004-05-01), Cheng et al.
patent: 6743684 (2004-06-01), Liu
patent: 6861318 (2005-03-01), Murthy et al.
patent: 6885084 (2005-04-01), Murthy et al.
patent: 6921913 (2005-07-01), Yeo et al.
patent: 6940089 (2005-09-01), Cheng et al.
patent: 7001837 (2006-02-01), Ngo et al.
patent: 7141820 (2006-11-01), Lee et al.
patent: 2001/0003364 (2001-06-01), Sugawara et al.
patent: 2002/0063292 (2002-05-01), Armstrong et al.
patent: 2002/0100942 (2002-08-01), Fitzgerald et al.
patent: 2002/0123197 (2002-09-01), Fitzgerald et al.
patent: 2002/0125471 (2002-09-01), Fitzgerald et al.
patent: 2002/0125497 (2002-09-01), Fitzgerald
patent: 2002/0140031 (2002-10-01), Rim
patent: 2002/0167048 (2002-11-01), Tweet et al.
patent: 2002/0190284 (2002-12-01), Murthy et al.
patent: 2002/0197803 (2002-12-01), Leitz et al.
patent: 2003/0013323 (2003-01-01), Hammond et al.
patent: 2003/0052334 (2003-03-01), Lee et al.
patent: 2003/0057439 (2003-03-01), Fitzgerald
patent: 2003/0077867 (2003-04-01), Fitzgerald
patent: 2003/0089901 (2003-05-01), Fitzgerald
patent: 2003/0227013 (2003-12-01), Currie et al.
patent: 2004/0007724 (2004-01-01), Murthy et al.
patent: 2004/0014276 (2004-01-01), Murthy et al.
patent: 2004/0026765 (2004-02-01), Currie et al.
patent: 2004/0119101 (2004-06-01), Schrom et al.
patent: 2005/0017236 (2005-01-01), Sugii et al.
patent: 2005/0023554 (2005-02-01), Chu et al.
patent: 2005/0151164 (2005-07-01), Leitz et al.
patent: 2006/0266997 (2006-11-01), Currie et al.
patent: 2007/0072354 (2007-03-01), Lee et al.
patent: 41 01 167 (1992-07-01), None
patent: 0 683 522 (1995-11-01), None
patent: 0 828 296 (1998-03-01), None
patent: 0 829 908 (1998-03-01), None
patent: 0 838 858 (1998-04-01), None
patent: 0 844 651 (1998-05-01), None
patent: 1 020 900 (2000-07-01), None
patent: 1 174 928 (2002-01-01), None
patent: 63122176 (1988-05-01), None
patent: 4-307974 (1992-10-01), None
patent: 7-106446 (1995-04-01), None
patent: 9-219524 (1997-08-01), None
patent: 11-233744 (1999-08-01), None
patent: 2000-21783 (2000-01-01), None
patent: 2001319935 (2000-05-01), None
patent: 2001-160594 (2001-06-01), None
patent: 2001-168342 (2001-06-01), None
patent: 02241195 (2002-08-01), None
patent: WO 98/59365 (1998-12-01), None
patent: WO 99/53539 (1999-10-01), None
patent: WO 00/54338 (2000-09-01), None
patent: WO 01/54202 (2001-07-01), None
patent: WO 01/93338 (2001-12-01), None
patent: WO 01/99169 (2001-12-01), None
patent: WO 02/13262 (2002-02-01), None
patent: WO 02/15244 (2002-02-01), None
patent: WO 02/47168 (2002-06-01), None
patent: WO 02/071488 (2002-09-01), None
patent: WO 02/071491 (2002-09-01), None
patent: WO 02/071495 (2002-09-01), None
“2 Bit/Cell EEPROM Cell Using Band-to-Band Tunneling for Data Read-Out,”IBM Technical Disclosure Bulletin, vol. 35, No. 4B (Sep. 1992) pp. 136-140.
Aigouy et al., “MOVPE Growth and optical characterization of ZnSe/ZnS strained layer superlattices,”Superlattices and Microstructures, vol. 16, No. 1 (1994) pp. 71-76.
Anonymous, “Germanium P-Channel Mosfet,”IBM Technical Disclosure Bulletin, vol. 28, No. 2 (Jul. 1, 1985) p. 500.
Armstrong et al., “Design of Si/SiGe Heterojunction Complementary Metal-Oxide-Semiconductor Transistors,”IEDM Technical Digest(1995) pp. 761-764.
Armstrong, “Technology for SiGe Heterostructure-Based CMOS Devices,” Submitted to the Massachusetts Institute of Technology Department of Electrical Engineering and Computer Science on Jun. 30, 1999, pp. 1-154.
Barradas et al., “RBS analysis of MBE-grown Si/Ge/(001) Si heterostructures with thin, high Ge content SiGe channels for HMOS transistors,”Modern Physics Letters B(2001) (abstract).
Bouillon et al., “Search for the optimal channel architecture for 0.18/0.12 μm bulk CMOS Experimental study,”IEEE, (1996) pp. 21.2.1-21.2.4.
Bufler et al., “Hole transport in strained Sil-xGexalloys on Sil-yGeysubstrates,”Journal of Applied Physics, vol. 84, No. 10 (Nov. 15, 1998) pp. 5597-5602.
Canaperi et al., “Preparation of a relaxed Si-Ge layer on an insulator in fabricating high-speed semiconductor d
Amberwave Systems Corporation
Goodwin & Procter LLP
Tran Thien F
LandOfFree
Methods of fabricating dual layer semiconductor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods of fabricating dual layer semiconductor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of fabricating dual layer semiconductor devices will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4024424