Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-04-26
2008-05-27
Lee, Calvin (Department: 2892)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S309000
Reexamination Certificate
active
07378313
ABSTRACT:
Methods are provided for robust and cost effective techniques to fabricate a semiconductor device having double-sided hemispherical silicon grain (HSG) electrodes for container capacitors. In an embodiment, this is accomplished by forming a layer of hemispherical silicon grain (HSG) polysilicon over interior surfaces of a polysilicon layer of a container formed in a substrate. An oxide cap may be formed on the top portion of the container.
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Lee Calvin
Micro)n Technology, Inc.
Schwegman Lundberg & Woessner, P.A.
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