Methods of fabricating crossbar array microelectronic...

Details Methods of fabricating crossbar array microelectronic... Methods of fabricating crossbar array microelectronic...

2005-10-25

2005-10-25

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S258000, C438S593000, C257S313000, C257S314000, C257S315000, C257S316000

Reexamination Certificate

active

06958270

ABSTRACT:
The present invention provides microelectronic electrochemical structures and related fabrication methods. A composite microelectronic structure is provided that includes first and second conductors dielectrically isolated from one another at a crossing thereof, the crossing surrounded by a dielectric material. A portion of the dielectric material around the crossing of the first and second conductors is removed to form a well that exposes respective outer surfaces of the first and second conductors and a molecule is deposited in the well such that the deposited molecule contacts the exposed outer surfaces of the first and second conductors.

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