Methods of fabricating copper interconnects for integrated circu

Details Methods of fabricating copper interconnects for integrated circu Methods of fabricating copper interconnects for integrated circu

1997-09-04

1999-05-04

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438643, 438648, 438653, 438656, 438659, 438685, 438687, 438783, 438785, 438985, H01L 214763

Patent

active

058997407

ABSTRACT:
Interconnects for integrated circuit substrates are formed by forming a diffusion-barrier film on an integrated circuit substrate and amorphizing the diffusion-barrier film to create an amorphous diffusion-barrier film. A copper film is then formed on the amorphous diffusion-barrier film. Amorphizing may be performed by implanting ions into the diffusion-barrier film. The diffusion-barrier film can include Mo, W, Ti, Wn, TiW, TiN and the ions may be boron, nitrogen and silicon ions. Interconnect structures according to the invention include an amorphous conductive diffusion-barrier film on an integrated circuit substrate and a copper film on the amorphous conductive diffusion-barrier film. The amorphous conductive diffusion-barrier film preferably contains ions therein. The amorphous conductive diffusion-barrier film and the ions may be selected from materials as described above.

REFERENCES:
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patent: 5104848 (1992-04-01), Miedema et al.
patent: 5391517 (1995-02-01), Gelatos et al.
patent: 5668411 (1997-09-01), Hong et al.
patent: 5753945 (1998-05-01), Chivukula et al.
patent: 5804249 (1998-09-01), Sukharev et al.

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