Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-11-02
2000-05-23
Fourson, George
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438666, H01L 2128
Patent
active
060665564
ABSTRACT:
Conductive lines are fabricated in integrated circuits by forming a groove in an insulating layer in the integrated circuit, wherein the groove has a sidewall, a base, and an upper surface. An insulating spacer is formed on the sidewall of the groove. The insulating spacer has a sloped contour from the sidewall to the base of the groove, defining a region at the base of the groove that is free of the insulating spacer. A conductive material is formed in the groove extending from the base of the groove to beneath the upper surface of the groove. The sloped contour of the spacer may provide for improved capping of conductive lines by allowing an increase in the amount of conductive material removed by a back-etching process, thereby reducing the likelihood of an electrical short between conductive lines.
REFERENCES:
patent: 5595937 (1997-01-01), Mikagi
patent: 5686354 (1997-11-01), Avanzino et al.
patent: 5795823 (1988-08-01), Avanzino et al.
Fourson George
Garcia Joannie A.
Samsung Electronics Co,. Ltd.
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