Methods of fabricating an image sensor

Details Methods of fabricating an image sensor Methods of fabricating an image sensor

2006-08-14

2008-12-09

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S155000, C438S275000, C438S287000, C438S591000, C257SE21625

Reexamination Certificate

active

07462520

ABSTRACT:
Provided are methods of fabricating an image sensor. Embodiments of such methods can include forming a first gate insulation layer in a first region of a semiconductor substrate and a first gate electrode layer, to cover the first gate insulation layer and forming a second gate insulation layer within a nitrogen enhanced atmosphere and a second gate electrode layer in a second region of the semiconductor substrate. The methods also include patterning the first gate electrode layer and the first gate insulation layer of the first region to form a first gate pattern and patterning the second gate electrode layer and the second gate insulation layer of the second region to form a second gate pattern.

REFERENCES:
patent: 5989962 (1999-11-01), Holloway et al.
patent: 6200834 (2001-03-01), Bronner et al.
patent: 6235590 (2001-05-01), Daniel et al.
patent: 6821904 (2004-11-01), Pradeep et al.
patent: 2002/0025633 (2002-02-01), Matsuoka et al.
patent: 2005/0136595 (2005-06-01), Horie
patent: 2005/0151175 (2005-07-01), Ohkawa
patent: 2007/0054455 (2007-03-01), Varghese et al.
patent: 2007/0082506 (2007-04-01), Wang et al.
patent: 1020040002207 (2004-01-01), None
patent: 1020040108488 (2004-12-01), None
patent: 1020050005162 (2005-01-01), None

Affiliated with

Also associated with

Rating

Methods of fabricating an image sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of fabricating an image sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of fabricating an image sensor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4030761