Methods of fabricating aluminum gates by implanting ions to form

Details Methods of fabricating aluminum gates by implanting ions to form Methods of fabricating aluminum gates by implanting ions to form

1999-07-14

2000-08-29

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438149, 438150, 438151, 438153, 438154, 251347, 251765, H01L 2100

Patent

active

061107662

ABSTRACT:
An aluminum gate for a thin film transistor is fabricating by implanting ions into the exposed surface of the aluminum gate. The ions are preferably selected from the group consisting of nitrogen, carbon, oxygen and boron ions. A composite layer of aluminum and the implanted ions thereby formed at the exposed surface of the aluminum layer. Gates for thin film transistors, including an aluminum layer and a composite layer of aluminum and another element at the surface thereof can suppress hillocks in the aluminum gate which may be caused by compressive stresses during subsequent fabrication steps. The composite layer can have a low resistance and can allow a direct contact with an indium tin oxide conductive layer.

REFERENCES:
patent: 3900352 (1975-08-01), Porter
patent: 4659427 (1987-04-01), Barry et al.
patent: 4680854 (1987-07-01), Ho et al.
patent: 5040048 (1991-08-01), Yasue
patent: 5236866 (1993-08-01), Yasue
patent: 5557137 (1996-09-01), Cohen
patent: 5969386 (1999-10-01), Hong
patent: 5969423 (1999-10-01), Raina et al.

Affiliated with

Also associated with

Rating

Methods of fabricating aluminum gates by implanting ions to form does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of fabricating aluminum gates by implanting ions to form, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of fabricating aluminum gates by implanting ions to form will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1249082